FEATURES
• Glass passivated chip junction
• Ultrafast reverse recovery time
• Low forward voltage drop
• Low switching losses, high efficiency
• High forward surge capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
1N4007 Ultrafast
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1N 4007 Ultrafast Silicon Diode (UF 4007), 1000V 1A, DO41
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Əlaqədar məhsullar
1N4004
1N4007
1N4005
1N4003
1N4006
1N4002
Son baxılanlar
ЭЦВ 4-2.5-120
Model: ЭЦВ 4-2.5-120
Ötürmə(saatda metr³): 2.5
Təzyiq(M): 120
Mühərrikin gücü(KVT): 2.2
Cərəyan şiddəti(A): 6.2
FİƏ %: 68
Gərginlik(V): 380
Çəkisi(kq): 28
Quyunun diametri (mm): 102.5
DS-7116HGHI-K1
16 Turbo HD/AHD/Analog interface input, 16-ch HDTVI coaxial video&audio
input, 1-ch RCA audio input, HDMI & VGA Output, 1 SATA interface, HD1080P
Lite: 12fps/ch, mini 1U case
BC556B
Type Designator: BC556B
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 65 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 240
Noise Figure, dB: –
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